A new 5G era created by you-GaN

wallpapers Technology 2020-03-04

In the 5G era, the advantages of the third-generation semiconductor are apparent.

The first generation of semiconductor materials mainly refers to silicon (Si) and germanium (Ge) element semiconductors. They have been widely used in various types of discrete devices and integrated circuits, electronic information network engineering, and other fields in the global information industry technology.

Second-generation semiconductor materials refer to compound semiconductor materials such as gallium arsenide (GaAs), indium antimonide (InSb), indium phosphide (InP), and ternary compound semiconductor materials such as aluminum gallium arsenide (GaAsAl), phosphorous Gallium arsenide (GaAsP), etc. There are also some solid solution semiconductor materials, such as silicon germanium (Ge-Si), gallium arsenide-gallium phosphide (GaAs-GaP), etc .; glass semiconductor (also known as amorphous semiconductor) materials, such as amorphous silicon, glassy oxidation Semiconductors, etc .; organic semiconductor materials, such as phthalocyanine, copper phthalocyanine, polyacrylonitrile, etc. The second-generation semiconductor materials are mainly used to make high-speed, high-frequency, high-power, and light-emitting electronic devices and are excellent materials for making high-performance microwave, millimeter-wave devices, and light-emitting devices.

The third-generation semiconductor materials are mainly wide band gaps represented by silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), diamond, and aluminum nitride (AlN) (gap width Eg> 2.3eV) Semiconductor material.

Wide band-gap semiconductors are suitable materials for high temperature, high frequency, radiation-resistant, and high power devices. Compared with the first and second generation semiconductor materials, the third generation semiconductor material has a more full-band gap width, more upper breakdown electric field, higher thermal conductivity, greater electron saturation speed, and higher Anti-radiation ability, more suitable for making high temperature, high frequency, anti-radiation, and high power devices. From the current research on third-generation semiconductor materials and accessories, the more mature third-generation semiconductor materials are SiC and GaN, while the research on third-generation semiconductor materials such as ZnO, diamond, and aluminum nitride is still in its infancy.

Third-generation semiconductor GaN: RF, power, and optoelectronics are widely used, with rich application scenarios in the 5G era

Gallium nitride (GaN) is an extremely stable compound. It is also a hard and high melting point material with a melting point of 1700 ° C. GaN has a high degree of ionization, the highest among the three or five compounds (0.5 or 0.43). Under atmospheric pressure, the GaN crystal is generally a hexagonal wurtzite structure. Because of its high hardness, it is also a good coating protection material. GaN has excellent breakdown capability, higher electron density and electron speed, and higher operating temperature. GaN has an extensive energy gap of 3.4eV and has the advantages of low conduction loss and high current density.

GaN crystal structure diagram

GaN is a III / V direct band-gap semiconductor, which is commonly used in the three significant fields of microwave radio frequency, power electronics, and optoelectronics. Specifically, the microwave radio frequency direction includes applications such as 5G communication, radar warning, and satellite communications; the power electronics direction contains applications such as smart grids, high-speed rail transit, new energy vehicles, and consumer electronics; the optoelectronic instruction includes LEDs, lasers, and optoelectronics Detectors and other applications.

"In the period of the explosive growth of 5G products, GaN will undoubtedly become a star material," said Mr. Luo, president of Trunnano.

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